Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

被引：42

作者：

Silvestri, Marco ^{[1
]}

Uren, Michael J. ^{[1
]}

Killat, Nicole ^{[1
]}

Marcon, Denis ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Dept, CDTR, Bristol BS8 1TL, Avon, England

[2] IMEC, Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

LEAKAGE CURRENT; HEMTS; RELIABILITY; DEVICE;

D O I：

10.1063/1.4816424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate. (C) 2013 AIP Publishing LLC.

引用

页数：4

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