Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films

被引：20
作者：
Blaszczyk-Lezak, I
Wrobel, AM
Bielinski, DM
机构：
[1] Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland
[2] Tech Univ Lodz, Fac Chem, Inst Polymers, PL-90924 Lodz, Poland
来源：
THIN SOLID FILMS | 2006年 / 497卷 / 1-2期
关键词：
silicon carbonitride film; density; refractive index; mechanical properties;
D O I：
10.1016/j.tsf.2005.09.191
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The physical, optical, and mechanical properties of silicon carbonitride (Si:C:N) films produced by the remote nitrogen plasma chemical vapor deposition (R-P-CVD) from tetramethyldisilazane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30-400 degrees C) were characterized in terms of their density, refractive index, hardness, elastic modulus, and friction coefficient. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N / Si, C / Si, and N/C, as well as structural parameters described by the relative integrated intensities of the infrared absorption bands from the Si-N, Si-C, and SiMe units (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable structure-property relationships have been determined. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：35 / 41
页数：7
相关论文
共 30 条
[1]   Hard Si-N-C coatings produced by pulsed glow discharge deposition [J].
Afanasyev-Charkin, I ;
Nastasi, M .
SURFACE & COATINGS TECHNOLOGY, 2004, 186 (1-2) :108-111
[2]   Silicon carbonitride, a new hard material and its relation to the confusion about 'harder than diamond' C3N4 [J].
Badzian, A ;
Badzian, T ;
Roy, R ;
Drawl, W .
THIN SOLID FILMS, 1999, 354 (1-2) :148-153
[3]   Silicon carbonitride: a rival to cubic boron nitride [J].
Badzian, A ;
Badzian, T ;
Drawl, WD ;
Roy, R .
DIAMOND AND RELATED MATERIALS, 1998, 7 (10) :1519-1525
[4]   Microstructure, mechanical properties, and wetting behavior of Si-C-N thin films grown by reactive magnetron sputtering [J].
Berlind, T ;
Hellgren, N ;
Johansson, MP ;
Hultman, L .
SURFACE & COATINGS TECHNOLOGY, 2001, 141 (2-3) :145-155
[5]   Mechanical and tribological properties of thin remote microwave plasma CVD a-Si:N:C films from a single-source precursor [J].
Bielinski, D ;
Wrobel, AM ;
Walkiewicz-Pietrzykowska, A .
TRIBOLOGY LETTERS, 2002, 13 (02) :71-76
[6]  
BLASZCZYKLEZAK I, UNPUB THIN SOLID FIL
[7]   Ion-assisted deposition of C-N and Si-C-N films [J].
He, ZG ;
Carter, G ;
Colligon, JS .
THIN SOLID FILMS, 1996, 283 (1-2) :90-96
[8]   HIGH-POWER DEPOSITION AND ANALYTICS OF AMORPHOUS-SILICON CARBIDE FILMS [J].
HEYNER, R ;
MARX, G .
THIN SOLID FILMS, 1995, 258 (1-2) :14-20
[9]   Mechanical and optical properties of hard SiCN coatings prepared by PECVD [J].
Jedrzejowski, P ;
Cizek, J ;
Amassian, A ;
Klemberg-Sapieha, JE ;
Vlcek, J ;
Martinu, L .
THIN SOLID FILMS, 2004, 447 :201-207
[10]   Moisture barrier properties of plasma enhanced chemical vapor deposited SiCxNy films on polyethylene naphthalate sheets and epoxy molding compound [J].
Kaltenpoth, G ;
Siebert, W ;
Stubhan, F ;
Wang, XH ;
Luo, L .
SURFACE & COATINGS TECHNOLOGY, 2002, 161 (01) :96-101
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