Photovoltaic Effect in Ultra-Thin a-Si/SiO2 Multilayered Structures

被引：0

作者：

Shatveryan, A. A. ^{[1
]}

Anopchenko, A. ^{[1
]}

Hossain, S. M. ^{[1
]}

Marconi, A. ^{[1
]}

Wang, M. ^{[1
]}

Pucker, G. ^{[2
]}

Bellutti, P. ^{[2
]}

Pavesi, L. ^{[1
]}

机构：

[1] Univ Trent, Dept Phys, Nanosci Lab, Via Sommarive 14, I-38100 Trento, Italy

[2] FBK, Microtechnol Lab, I-38100 Trento, Italy

来源：

2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年

关键词：

D O I：

10.1109/GROUP4.2008.4638210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150 degrees C were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.

引用

页码：390 / 392

页数：3

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