in-situ Characterization of MOCVD grown GaAs- and InP-based tunable VCSEL structures

被引：0

作者：

Grasse, Christian ^{[1
]}

Tomita, Yuto ^{[2
]}

Wiecha, Peter ^{[1
]}

Meyer, Ralf ^{[1
]}

Gruendl, Tobias ^{[1
]}

Mueller, Michael ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, Coloumbwall 3, D-85748 Garching, Germany

[2] LayTec AG, D-10709 Berlin, Germany

来源：

2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

in-situ monitoring; MOCVD; InP; GaAs; VCSEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-situ monitoring of growth parameters such as thickness and quality of InP and GaAs based materials is presented. This is a key technology for the fabrication of optoelectronic devices like VCSELs.

引用

页数：2