Photoluminescence Properties of SiO2:Tb3+ Inverse Opal with Tunable Photonic Band Gap

被引:2
|
作者
Liu, Zhendong [1 ]
Li, Bo [2 ]
Zhou, Ji [1 ]
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Shenzhen Grad Sch, Adv Mat Inst, Shenzhen 518055, Peoples R China
来源
CHINA FUNCTIONAL MATERIALS TECHNOLOGY AND INDUSTRY FORUM | 2013年 / 320卷
基金
国家高技术研究发展计划(863计划);
关键词
Photonic crystals; Band gap shifting; Sol-gel SiO2; Spontaneous emission; SPONTANEOUS EMISSION; BRAGG REFLECTION; STOP BAND; CRYSTALS; SPHERES; EU3+; AIR;
D O I
10.4028/www.scientific.net/AMM.320.155
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Temperature tunable photonic crystals were fabricated based on liquid-infiltrated inverse opal films which were prepared by Tb3+ doped SiO2 with a sol-gel method. The photoluminescence was investigated with the photonic band gap shift tuned by temperature. The results show that obvious suppression of spontaneous emission occurs when the photonic band gap overlaps with the Tb3+ emission band, while enhancement of the emission is observed if the emission band shifts at the edge of the band gap.
引用
收藏
页码:155 / +
页数:3
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