Ultrathin VOx/TiO2(110) (x ≈ 1)film preparation by controlled oxidation of metal deposits

被引：22

作者：

Della Negra, M

Sambi, M

Granozzi, G

机构：

[1] INSTM, Consorzio Interuniv Sci Tecnol Mat, I-35131 Padua, Italy

[2] Dipartimento Chim Inorgan Met Organ & Analit, I-35131 Padua, Italy

来源：

SURFACE SCIENCE | 1999年 / 436卷 / 1-3期

关键词：

epitaxy; photoelectron diffraction; titanium oxide; vanadium oxide; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(99)00666-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metallic vanadium ultrathin films deposited on the TiO2 (110) surface are easily oxidised to VO2 when they react with O-2 in the high vacuum pressure range. We have found that the oxidation can be stopped at VOx (x approximate to 1)when annealing of the metal film is carried out in UHV, by exploiting the reaction with bulk-to-surface diffusing oxygen. By adopting carefully optimised experimental conditions (e.g. metal film thickness and annealing temperature), locally ordered VOx films with a thickness of up to 5 ML can be prepared. X-ray photoelectron spectroscopy and angle-scanned photoelectron diffraction, as an in situ structural characterisation tool, have proven to be extremely useful in order to find optimised conditions for the whole process. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：227 / 236

页数：10

共 21 条

[1] ELECTROCHROMISM IN SOME THIN-FILM TRANSITION-METAL OXIDES CHARACTERIZED BY X-RAY ELECTRON-SPECTROSCOPY [J].