Inductively coupled plasma reactive ion etching-induced GaN defect studied by schottky current transport analysis

被引：7
作者：
Huang, KC
Lan, WH [1 ]
Huang, KF
机构：
[1] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan
[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 01期
关键词：
GaN; ICP; current transport mechanism; Schottky diodes;
D O I：
10.1143/JJAP.43.82
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The defect induced by inductively coupled plasma reactive ion etching (ICP-RIE) on a GaN surface has been examined through current transport analysis. The current transport mechanism of field emission and thermionic emission were characterized. Annealing in nitrogen and hydrogen ambient was used to eliminate the defect induced by the ICP-RIE process. A comparison of the ideal factor and characteristic energy reveals that hydrogen is more effective than nitrogen in removing the defect induced by the ICP-RIE.
引用
收藏
页码：82 / 85
页数：4
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