Transmission electron microscope study of a threading dislocation with b = [0001] + ⟨1 (1)over-bar0 0⟩ and its effect on leakage in a 4H-SiC MOSFET

被引：28

作者：

Onda, Shoichi ^{[1
,2
]}

Watanabe, Hiroki ^{[1
]}

Kito, Yasuo ^{[1
]}

Kondo, Hiroyuki ^{[1
]}

Uehigashi, Hideyuki ^{[1
]}

Hosokawa, Norikazu ^{[1
]}

Hisada, Yoshiyuki ^{[1
]}

Shiraishi, Kenji ^{[2
]}

Saka, Hiroyasu ^{[3
]}

机构：

[1] DENSO CORP, Res Labs, Komenoki, Nisshin 4700111, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[3] Nagoya Univ, Sch Engn, Dept Mat & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2013年 / 93卷 / 08期

关键词：

defects; dislocations; SiC; silicon carbide; TEM; DEFECTS;

D O I：

10.1080/09500839.2013.798047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Threading dislocations (TD's) in a 4H-SiC MOSFET were characterized using transmission electron microscopy with special emphasis of their effects on leakage in a p-n junction. Two types of TD's were identified; a threading near-screw dislocation (TnSD) with b - [0 0 0 1] + 1/3 < 1 1 (2) over bar0 >, and a threading mixed dislocation (TMD) with b = [0 0 0 1] + < 1 (1) over bar0 0 >, the last of which has been found for the first time in this study. The TnSD show only negligibly small leakage, while TMD shows a large leakage. Origins of the difference in the degree of the leakage have been discussed.

引用

页码：439 / 447

页数：9

共 13 条

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