Hidden thin-film phase of dinaphthothienothiophene revealed by high-resolution X-ray diffraction

被引：7
作者：
Shioya, Nobutaka [1 ]
Eda, Kazuo [2 ]
Shimoaka, Takafumi [1 ]
Hasegawa, Takeshi [1 ]
机构：
[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[2] Kobe Univ, Grad Sch Sci, Dept Chem, Nada Ku, 1-1 Rokko Dai, Kobe, Hyogo 6578501, Japan
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 09期
基金：
日本学术振兴会;
关键词：
DNTT; organic semiconductor; thin-film phase; physical vapor deposition; high-resolution XRD; CRYSTAL-STRUCTURE; EVAPORATED PENTACENE; GROWTH; SUBSTRATE; DNTT; IDENTIFICATION; POLYMORPHISM; SCHERRER;
D O I：
10.35848/1882-0786/abb061
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dinaphthothienothiophene (DNTT) has attracted considerable attention as a next-generation material for organic thin-film transistors, replacing the conventional basic material of pentacene. Although the performance of DNTT devices is higher than that of pentacene, and has been reported numerously, a comprehensive understanding of thin-film growth is lacking. In fact, thin-film structures have long been believed to be identical to single-crystal structures. In the present study, the thickness-dependent structural evolution is revealed by means of high-resolution X-ray diffraction. This technique apparently discriminates the thin-film structure from the conventionally known bulk structure. Thus, we have revealed the thin-film phase of DNTT for the first time.
引用
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页数：5
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