Dinaphthothienothiophene (DNTT) has attracted considerable attention as a next-generation material for organic thin-film transistors, replacing the conventional basic material of pentacene. Although the performance of DNTT devices is higher than that of pentacene, and has been reported numerously, a comprehensive understanding of thin-film growth is lacking. In fact, thin-film structures have long been believed to be identical to single-crystal structures. In the present study, the thickness-dependent structural evolution is revealed by means of high-resolution X-ray diffraction. This technique apparently discriminates the thin-film structure from the conventionally known bulk structure. Thus, we have revealed the thin-film phase of DNTT for the first time.
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA
McAuliffe, Rebecca D.
Shoemaker, Daniel P.
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机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA
McAuliffe, Rebecca D.
Shoemaker, Daniel P.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA