Hidden thin-film phase of dinaphthothienothiophene revealed by high-resolution X-ray diffraction

被引：7

作者：

Shioya, Nobutaka ^{[1
]}

Eda, Kazuo ^{[2
]}

Shimoaka, Takafumi ^{[1
]}

Hasegawa, Takeshi ^{[1
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

[2] Kobe Univ, Grad Sch Sci, Dept Chem, Nada Ku, 1-1 Rokko Dai, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 09期

基金：

日本学术振兴会;

关键词：

DNTT; organic semiconductor; thin-film phase; physical vapor deposition; high-resolution XRD; CRYSTAL-STRUCTURE; EVAPORATED PENTACENE; GROWTH; SUBSTRATE; DNTT; IDENTIFICATION; POLYMORPHISM; SCHERRER;

D O I：

10.35848/1882-0786/abb061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dinaphthothienothiophene (DNTT) has attracted considerable attention as a next-generation material for organic thin-film transistors, replacing the conventional basic material of pentacene. Although the performance of DNTT devices is higher than that of pentacene, and has been reported numerously, a comprehensive understanding of thin-film growth is lacking. In fact, thin-film structures have long been believed to be identical to single-crystal structures. In the present study, the thickness-dependent structural evolution is revealed by means of high-resolution X-ray diffraction. This technique apparently discriminates the thin-film structure from the conventionally known bulk structure. Thus, we have revealed the thin-film phase of DNTT for the first time.

引用

页数：5

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