Growth morphology and electronic properties of Sn deposited on different InSb surfaces

被引:8
作者
Magnano, E
Pivetta, M
Sancrotti, M
Casalis, L
Fantini, P
Betti, MG
Mariani, C
机构
[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy
[2] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy
[3] Univ Modena, Dipartimento Fis, Ist Nazl Fis Mat, I-41100 Modena, Italy
关键词
growth; indium antimonide; photoelectron spectroscopy; surface electronic phenomena; tin;
D O I
10.1016/S0039-6028(99)00110-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a study of the growth morphology and electronic properties of Sn deposition on ZnSb(111) A-type and ZnSb(110) surfaces, by means of photoemission spectroscopy. Tin grows in a layer-by-layer fashion on the (111) substrate, with a (1x1) symmetry characteristic of pseudomorphic bulk-like Sn(111). A first-ordered monolayer followed by Sn island formation is observed on the (110) surface, and we estimate a fractional area of Sn islands increasing from 60% at two monolayers nominal coverage to about 80% at higher coverages. Both interfaces show the formation of non-metallic Sn adlayer at room temperature, while annealing of a multilayer Sn/InSb(110) produces a light metallic-like response, probably due to Sn clustering. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:387 / 391
页数:5
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