A 5.9 GHz-8.5 GHz 20 Watts GaN HEMT

被引：0

作者：

Mizuno, Shinya ^{[1
]}

Yamamoto, Hiroshi ^{[1
]}

Yamamoto, Takashi ^{[2
]}

Nishihara, Makoto ^{[2
]}

Sano, Seigo ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, 1000 Kamisukiawara,Showa Cho, Nakakoma, Yamanashi 4093883, Japan

[2] Sumitomo Elect Device Innovat Inc, Transmiss Devices R&D Labs, Nakakoma, Yamanashi 4093883, Japan

来源：

2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年

关键词：

GaN HEMT; C-band; power amplifiers; high efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 20 Watts GaN high electron mobility transistor (HEMT) has been developed for C-band radio applications. The device consists of a single die of 0.35 um-gate GaN HEMT of 12 mm gate periphery together with input and output 2- stage impedance transformers into a conventional package. The developed GaN HEMT provides 20 watts output power and 40 % power added efficiency over 5.9 GHz to 8.5 GHz with small signal gain of 13.5 dB.

引用

页码：123 / 126

页数：4

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