Interaction of H and F atoms-Origin of the high conductive stability of hydrogen-incorporated F-doped ZnO thin films

被引：7

作者：

Guo, Yanmin ^{[1
]}

Zhu, Liping ^{[1
,2
]}

Li, Yaguang ^{[1
]}

Niu, Wenzhe ^{[1
]}

Zhang, Xiangyu ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

THIN SOLID FILMS | 2015年 / 589卷

基金：

中国国家自然科学基金;

关键词：

Fluorine-doped ZnO thin films; H plasma treatment; High conductive stability; First principle calculation; Electrostatic attraction; OPTICAL-PROPERTIES; ZINC-OXIDE; ELECTRICAL-PROPERTIES; THERMAL-STABILITY; TRANSPARENT; DEPOSITION; FLUORINE;

D O I：

10.1016/j.tsf.2015.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We intentionally incorporated H into fluorine-doped ZnO thin films (FZO) by plasma treatment. Upon treatment, both mobility and electron concentration have an observable increase, especially the mobility reaches up to 30.1 cm(2) V-1 s(-1) (3 times higher than the untreated films). H distributes in the FZO thin films uniformly via plasma treatment. The treated FZO thin films showed good conductive stability at 500 degrees C and saved for 6 months, until now. Origin of high conductive stability was explained by first principle calculation. The results predicted that hydrogen atoms in interstitial sites next to F-O are attracted by the incorporated fluorine atoms and this configuration has lower formation energy than the hydrogen in oxygen vacancy configuration. Thus, we owed the highly stable conductivity to the hydrogen as interstitial as well as hydrogen in oxygen vacancy. (C) 2015 Elsevier B. V. All rights reserved.

引用

页码：85 / 89

页数：5

共 37 条

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