Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

被引：33

作者：

Bu, SD ^{[1
]}

Park, BH

Kang, BS

Kang, SH

Noh, TW

Jo, W

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea

[3] LG Corp Inst Technol, Seoul 137140, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0-1.5 J/cm(2), films with large remnant polarizations (as high as 18.7 mu C/cm(2)) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. (C) 1999 American Institute of Physics. [S0003-6951(99)03234-9].

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页码：1155 / 1157

页数：3

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