Analysis of device parameters of Al/In2O3/p-Si Schottky diode

被引：35
作者：
Gupta, R. K. [1 ]
Yakuphanoglu, F. [2 ]
机构：
[1] N Carolina Agr & Tech State Univ, Engn Res Ctr, Greensboro, NC 27411 USA
[2] Firat Univ, Fac Sci, Dept Phys, TR-23169 Elazig, Turkey
来源：
MICROELECTRONIC ENGINEERING | 2013年 / 105卷
关键词：
Indium oxide; Schottky diode; Sol-gel; Current-voltage; Capacitance-voltage; INDIUM-TIN-OXIDE; THIN-FILMS; ELECTRICAL-PROPERTIES; SERIES RESISTANCE; TRANSPARENT; INTERFACE; ALUMINUM; TEMPERATURE; FABRICATION; EVAPORATION;
D O I：
10.1016/j.mee.2012.12.026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin film of indium oxide (In2O3) is deposited on p-silicon substrate using sol-gel spin technique. The sal-gel spin deposited film is very smooth with grain size and root mean square surface roughness of similar to 40 nm and similar to 7.9 nm, respectively. The device parameters of Al/In2O3/p-Si Schottky diode were investigated using direct current current-voltage (I-V) and impedance spectroscopy. The ideality factor and barrier height of the diode were determined to be 1.07 +/- 0.03 and 0.72 +/- 0.02 eV, respectively. At higher voltages, the charge transport mechanism of the diode is controlled by a trap-charge limited conduction mechanism (TCLC). The series resistance profile of the diode was extracted to show the presence of the interface states changing with frequency. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：13 / 17
页数：5
相关论文
共 36 条
  • [1] Extraction of electronic parameters of Schottky diode based on an organic Indigotindisulfonate Sodium (IS)
    Aydogan, Sakir
    Incekara, Uemit
    Deniz, A. R.
    Turut, Abdulmecit
    [J]. SOLID STATE COMMUNICATIONS, 2010, 150 (33-34) : 1592 - 1596
  • [2] NEW TECHNIQUE FOR THE DETERMINATION OF SERIES RESISTANCE OF SCHOTTKY-BARRIER DIODES
    CHATTOPADHYAY, P
    RAYCHAUDHURI, B
    [J]. SOLID-STATE ELECTRONICS, 1992, 35 (07) : 1023 - 1024
  • [3] Preparation and characterization of In2O3 nanorods
    Cheng, Zhi-Xuan
    Dong, Xiang-Bing
    Pan, Qing-Yi
    Zhang, Jian-cheng
    Dong, Xiao-Wen
    [J]. MATERIALS LETTERS, 2006, 60 (25-26) : 3137 - 3140
  • [4] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
    CHEUNG, SK
    CHEUNG, NW
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 85 - 87
  • [5] InOx semiconductor films deposited on glass substrates for transparent electronics
    de Carvalho, C. Nunes
    Lavareda, G.
    Amaral, A.
    Conde, O.
    Ramos, A. R.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) : 2315 - 2318
  • [6] Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
    Dokme, I.
    Altindal, S.
    Tunc, T.
    Uslu, I.
    [J]. MICROELECTRONICS RELIABILITY, 2010, 50 (01) : 39 - 44
  • [7] Controlling of electrical characteristics of Al/p-Si Schottky diode by tris(8-hydroxyquinolinato) aluminum organic film
    Farag, A. A. M.
    Gunduz, B.
    Yakuphanoglu, Fahrettin
    Farooq, W. A.
    [J]. SYNTHETIC METALS, 2010, 160 (23-24) : 2559 - 2563
  • [8] Influence of the annealing temperature on the properties of undoped indium oxide thin films obtained by the sol-gel method
    Flores-Mendoza, M. A.
    Castanedo-Perez, R.
    Torres-Delgado, G.
    Marin, J. Marquez
    Zelaya-Angel, O.
    [J]. THIN SOLID FILMS, 2008, 517 (02) : 681 - 685
  • [9] High mobility Ti-doped In2O3 transparent conductive thin films
    Gupta, R. K.
    Ghosh, K.
    Mishra, S. R.
    Kahol, P. K.
    [J]. MATERIALS LETTERS, 2008, 62 (6-7) : 1033 - 1035
  • [10] Effect of thickness on optoelectrical properties of Mo-doped indium oxide films
    Gupta, R. K.
    Ghosh, K.
    Patel, R.
    Kahol, P. K.
    [J]. APPLIED SURFACE SCIENCE, 2008, 255 (05) : 3046 - 3048
1234