Weak localization and weak anti-localization in polycrystalline In2O3-x thin films grown by sputtering method

被引：0
作者：
Kobori, H
Kawaguchi, M
Hatta, N
Ohyama, T
Ishida, S
机构：
[1] Konan Univ, Dept Phys, Fac Sci & Engn, Higashinada Ku, Kobe, Hyogo 6588501, Japan
[2] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[3] Sci Univ Tokyo, Fac Sci & Engn, Yamaguchi 7560884, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 230卷 / 01期
关键词：
D O I：
10.1002/1521-3951(200203)230:1<277::AID-PSSB277>3.0.CO;2-C
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Weak localization (WL) and weak anti-localization (WAL) phenomena in polycrystalline In2O3-x thin films grown by sputtering have been studied on the magneto-conductance (MC) before and after the heat treatment, as functions of the temperature, the magnetic field, the azimuth of magnetic field and the film thickness (10-60 nm). The WL profile in MC undergoes a drastic change by the heat treatment above 350 degreesC and the WAL phenomena become remarkable with increasing temperature. It has been concluded that the OVAL arises from the spin-orbit scattering by the excess indium atoms through the elimination of oxygen atoms from the indium oxide by the heat treatment.
引用
收藏
页码：277 / 280
页数：4
相关论文
共 50 条
[41]   Observation of Weak Anti-Localization and Electron-Electron Interaction on Few-Layer 1T′-MoTe2 Thin Films [J].
Wang, Qin ;
Yu, Peng ;
Huang, Xiangwei ;
Fan, Jie ;
Jing, Xiunian ;
Ji, Zhongqing ;
Liu, Zheng ;
Liu, Guangtong ;
Yang, Changli ;
Lu, Li .
CHINESE PHYSICS LETTERS, 2018, 35 (07)
[42]   Percolation and weak localization in thin discontinuous aluminum films [J].
Yamada, K ;
Shinozaki, B ;
Kawaguti, T .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 18 (1-3) :286-287
[43]   Sizeable enhancement of anti-weak localization effect in In2O3-x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment [J].
Kobori, H ;
Kawaguchi, M ;
Hatta, N ;
Ohyama, T .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 18 (1-3) :296-297
[44]   Magneto-transport and weak anti-localization in ferromagnetic semiconductor CrSiTe3 single crystal [J].
Zhang, Zongteng ;
Wang, Zhenhua ;
Zhang, Zhidong .
APPLIED PHYSICS LETTERS, 2018, 113 (14)
[45]   EFFECTS OF WEAK ELECTRON LOCALIZATION IN THIN GAAS FILMS [J].
SAVCHENKO, AK ;
LUTSKII, VN ;
SERGEEV, VI .
JETP LETTERS, 1982, 36 (05) :185-188
[46]   MODIFICATION OF WEAK LOCALIZATION IN THIN ANNEALED PD FILMS [J].
PAPANDREOU, N ;
NEDELLEC, P .
PHYSICA B, 1990, 165 :281-282
[47]   Crossover between weak anti-localization and weak localization by Co doping and annealing in gapless PbPdO2 and spin gapless Co-doped PbPdO2 [J].
Choo, S. M. ;
Lee, K. J. ;
Park, S. M. ;
Yoon, J. B. ;
Park, G. S. ;
You, C-Y. ;
Jung, M. H. .
APPLIED PHYSICS LETTERS, 2015, 106 (17)
[48]   Enhancement of negative magnetoresistance due to weak localization in In2O3 thin films on Si substrate [J].
Fujimoto, A. ;
Kitamura, M. ;
Kobori, H. ;
Yamasaki, A. ;
Sugimura, A. ;
Ando, A. ;
Kawanaka, H. ;
Naitoh, Y. ;
Shimizu, T. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04) :1134-1137
[49]   Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime [J].
Chou, C. -T. ;
Jacobson, N. T. ;
Moussa, J. E. ;
Baczewski, A. D. ;
Chuang, Y. ;
Liu, C. -Y. ;
Li, J. -Y. ;
Lu, T. M. .
NANOSCALE, 2018, 10 (44) :20559-20564
[50]   Gate-modulated weak anti-localization and carrier trapping in individual Bi2Se3 nanoribbons [J].
Wang, Li-Xian ;
Yan, Yuan ;
Liao, Zhi-Min ;
Yu, Da-Peng .
APPLIED PHYSICS LETTERS, 2015, 106 (06)
12345