Weak localization and weak anti-localization in polycrystalline In2O3-x thin films grown by sputtering method

被引：0

作者：

Kobori, H

Kawaguchi, M

Hatta, N

Ohyama, T

Ishida, S

机构：

[1] Konan Univ, Dept Phys, Fac Sci & Engn, Higashinada Ku, Kobe, Hyogo 6588501, Japan

[2] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan

[3] Sci Univ Tokyo, Fac Sci & Engn, Yamaguchi 7560884, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 230卷 / 01期

关键词：

D O I：

10.1002/1521-3951(200203)230:1<277::AID-PSSB277>3.0.CO;2-C

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Weak localization (WL) and weak anti-localization (WAL) phenomena in polycrystalline In2O3-x thin films grown by sputtering have been studied on the magneto-conductance (MC) before and after the heat treatment, as functions of the temperature, the magnetic field, the azimuth of magnetic field and the film thickness (10-60 nm). The WL profile in MC undergoes a drastic change by the heat treatment above 350 degreesC and the WAL phenomena become remarkable with increasing temperature. It has been concluded that the OVAL arises from the spin-orbit scattering by the excess indium atoms through the elimination of oxygen atoms from the indium oxide by the heat treatment.

引用

页码：277 / 280

页数：4

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