A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipoles in HKMG MOSFETs

被引：0

作者：

Hsieh, Shang-Hsun ^{[1
]}

Hung, Jo-Chun ^{[1
]}

Chen, Ming-Jer ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2016年

关键词：

MOBILITY; IMPURITY; PHONON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We devise a new microscopic formalism for the remote dipole scattering (RDS) limited relaxation time in the inversion layers of HKMG MOSFETs. This formalism can apply to two different dipole configurations: (i) a "one dipole" configuration and (ii) a "paired dipoles" configuration. We find that when fitting the inversion-layer effective electron mobility measured from the industry-level hafnium-based metal gate MOSFETs, the former configuration yields a large value of the HK/IL interface dipole density of around 1015 cm(-2), accompanied by a large threshold voltage shift Delta V-th_dipole of 12 V. These values are comparable with those of the existing Monte Carlo simulation. More importantly, in case of the latter configuration (paired dipoles) plus the experimentally determined fixed charges, the corresponding values can be significantly reduced to 10(14) cm(-2) and 2 V, which are quite close to the experimental estimations in the literature.

引用

页码：201 / 204

页数：4