The quantum confined Stark effect in silicon nanocrystals

被引：13

作者：

Kulakci, Mustafa ^{[1
]}

Serincan, Ugur ^{[2
]}

Turan, Rasit ^{[1
]}

Finstad, Terje G. ^{[3
]}

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Anadolu Univ, Dept Phys, TR-26470 Eskisehir, Turkey

[3] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 45期

关键词：

D O I：

10.1088/0957-4484/19/45/455403

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts to higher wavelengths with increasing applied electric field, which is expected from carrier polarization within the quantum dots. It is observed that the effect is more pronounced at lower temperatures due to the improved carrier localization at the lowest energy states of the quantum dots. Experimental results are shown to be in good agreement with phenomenological model developed for the QCSE model.

引用

页数：5

共 30 条

[1] Electric-field-controlled photoluminescence of CdSe nanocrystal-doped SiO2 on Si [J].

Achtstein, A. W. ;

Karl, H. ;

Stritzker, B. .

JOURNAL OF LUMINESCENCE, 2006, 121 (02) :365-368

[2]

ARAWAKA T, 1997, APPL PHYS LETT, V70, P646

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] Intraband absorption and Stark effect in silicon nanocrystals [J].

de Sousa, JS ;

Leburton, JP ;

Freire, VN ;

da Silva, EF .

PHYSICAL REVIEW B, 2005, 72 (15)

[5] Influence of nanocrystal size on optical properties of Si nanocrystals embedded in SiO2 synthesized by Si ion implantation [J].

Ding, L. ;

Chen, T. P. ;

Liu, Y. ;

Yang, M. ;

Wong, J. I. ;

Liu, Y. C. ;

Trigg, A. D. ;

Zhu, F. R. ;

Tan, M. C. ;

Fung, S. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

[6] Quantum-confined stark effect in single CdSe nanocrystallite quantum dots [J].

Empedocles, SA ;

Bawendi, MG .

SCIENCE, 1997, 278 (5346) :2114-2117

[7] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Mowbray, DJ ;

Skolnick, MS ;

Finley, JJ ;

Barker, JA ;

O'Reilly, EP ;

Wilson, LR ;

Larkin, IA ;

Maksym, PA ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G ;

Clark, JC .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736

[8] Silicon nanocrystals:: Size matters [J].

Heitmann, J ;

Müller, F ;

Zacharias, M ;

Gösele, U .

ADVANCED MATERIALS, 2005, 17 (07) :795-803

[9] Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2 [J].

Ioannou-Sougleridis, V ;

Kamenev, B ;

Kouvatsos, DN ;

Nassiopoulou, AG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :324-328

[10] Influence of surface states on the photoluminescence from silicon nanostructures [J].

Islam, MN ;

Kumar, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1753-1759

← 1 2 3 →