Study of charge transport in P3HT:SiNW-based photovoltaic devices

被引：9
作者：
Azizi, Samir [2 ]
Braik, Mourad [1 ]
Dridi, Cherif [1 ,3 ]
Ben Ouada, Hafedh [1 ]
Ryback, Andrzej [4 ]
Davenas, Joel
机构：
[1] Univ Monastir, Fac Sci Monastir, Dept Phys, LIMA, Monastir 5019, Tunisia
[2] Ecole Super Sci & Tech Tunis, LMM, Tunis 1008, Tunisia
[3] Univ Sousse, Inst Super Sci Appl & Technol Sousse, Cite Ettafala 4003, Ibn Khaldoun So, Tunisia
[4] Univ Lyon 1, EPUL, LMPB IMP, F-69622 Villeurbanne, France
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 108卷 / 01期
关键词：
DIELECTRIC-PROPERTIES; SILICON NANOWIRES; POLYMER; NANOCOMPOSITES; CONDUCTIVITY; TEMPERATURE; FREQUENCY; COPOLYMER; MOBILITY; FILMS;
D O I：
10.1007/s00339-012-6991-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hybrid devices based on silicon nanowires (SiNWs) dispersed in a conjugated polymer poly(3-hexylthiophene) P3HT thin films have been realized. The carrier transport mechanism in inorganic/organic hybrid nancocomposites consisting of SiNW dispersed in P3HT layer was investigated by using I-V characteristics and impedance spectroscopy measurements. The conduction mechanism in these hybrid nanocomposites has been identified to be thermionic emission at the interfaces. The electrical parameters of the structure have been investigated by modelization of the I-V characteristics using an electrical equivalent circuit and have been extracted for the different SiNW volume ratios. The barrier height, the series resistance and the shunt resistance values of the diodes have been calculated as about 0.9 eV, several k Omega and several M Omega, respectively. The diode behaves as non-ideal one because of the series resistance and the Donor/Acceptor interface layer. The impedance spectroscopy study, in the frequency range 100 Hz-100 kHz, shows a typical behavior of disordered materials and indicative of a hopping transport in the investigated temperature range. The dc conductivity follows the Arrhenius law with an activation energy transition from 8.4 to 55.8 meV at about 294 K.
引用
收藏
页码：99 / 106
页数：8
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