Current controlled random-access memory based on magnetic vortex handedness

被引：176

作者：

Bohlens, Stellan ^{[1
]}

Krueger, Benjamin ^{[1
]}

Drews, Andre ^{[2
,3
]}

Bolte, Markus ^{[2
,3
]}

Meier, Guido ^{[2
,3
]}

Pfannkuche, Daniela ^{[1
]}

机构：

[1] Univ Hamburg, Inst Theoret Phys 1, D-20355 Hamburg, Germany

[2] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[3] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期

关键词：

D O I：

10.1063/1.2998584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The theoretical foundation for a nonvolatile memory device based on magnetic vortices is presented. We propose a realization of a vortex random-access memory (VRAM) containing vortex cells that are controlled by alternating currents only. The proposed scheme allows to transfer the vortex into an unambiguous binary state regardless of its initial state within a subnanosecond time scale. The vortex handedness defined as the product of chirality and polarization as a bit representation allows direct mechanisms for reading and writing the bit information. The VRAM is stable at room temperature. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2998584]

引用

页数：3

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