A study of the interface action between Gd2CuO4 layer and Si, SiO2/Si substrate

Gd2CuO4 film was deposited on Si and SiO2/Si wafer by using amorphous heteronuclear complex as a precursor. XRD indicated that Gd2CuO4 film with a perovskite structure could be formed on single crystal Si substrate at 600 degreesC for 1 h and on SiO2/Si substrate at 700 degreesC for I h. The crystalline size of the Gd2CuO4 film on Si wafer increased from 17 to 21 nm with the calcination temperature increasing from 600 to 800 degreesC for 1 h. The calcination time had less effect on the crystalline size. The crystallization temperature of Gd2CuO4/SiO2/Si was higher than that of Gd2CuO4/Si sample due to the interface diffusion. The interface diffusion between Gd2CuO4 film and Si substrate had taken place and the interface species were Gd2O3, CuO, SiO and Si. The interface diffusion between Gd2CuO4 film and SiO2/Si substrate was much serious than that of Gd2CuO4/Si sample. Gd and Cu diffused into SiO2 layer and existed in Gd2O3 and CuO simple oxides.