Growth and Characterization of Mn5SiC Nanowires

被引：2

作者：

Kang, Sungmu ^{[1
]}

Brewer, Greg A. ^{[2
]}

Battogtokh, Jugdersuren ^{[1
,3
]}

DiPietro, Robert S. ^{[4
]}

Heiman, Don ^{[4
]}

Buechele, Andrew C. ^{[1
]}

McKeown, David A. ^{[1
]}

Pegg, Ian L. ^{[1
,3
]}

Philip, John ^{[1
,3
]}

机构：

[1] Catholic Univ Amer, Vitreous State Lab, Washington, DC 20064 USA

[2] Catholic Univ Amer, Dept Chem, Washington, DC 20064 USA

[3] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA

[4] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

来源：

NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2009年 / 1卷 / 02期

关键词：

Nanowires; Chemical Vapor Deposition; Ferromagnetic Nanostructures; MAGNETIC-PROPERTIES; ELECTRONIC-STRUCTURE; CARBON NANOTUBES; FERROMAGNETISM; SEMICONDUCTOR; NANOPARTICLES; MECHANISM; FILMS;

D O I：

10.1166/nnl.2009.1018

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si-based ferromagnetic Mn5SiC nanowires were grown using a coordination compound, bis(4,4,4-trifluoro-1-phenyl-1,3-butanedionato)manganese(II) complex precursor. The nanowires exhibit n-type semiconducting behavior and are ferromagnetic at room temperature. In the presence of an external magnetic field, Mn5SiC nanowire-based devices exhibit spin dependent transport properties at room temperature. A large change in current with almost two orders of magnitude increase is observed when a small field is applied parallel to the axial direction of the nanowire. The current voltage characteristics of the device also depend on the angle at which the external magnetic field is applied. Novel spin electronic devices can be fabricated using the properties exhibited by the Mn5SiC nanostructures.

引用

页码：77 / 81

页数：5

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