Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

被引：51

作者：

Bennett, Brian R. ^{[1
]}

Ancona, Mario G. ^{[1
]}

Boos, J. Brad ^{[1
]}

Canedy, Corwyn B. ^{[1
]}

Khan, Saara A. ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 311卷 / 01期

关键词：

Molecular beam epitaxy; Quantum wells; Semiconducting III-V materials; Semiconducting gallium compounds; Semiconducting ternary compounds; Field effect transistors;

D O I：

10.1016/j.jcrysgro.2008.10.025

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Quantum wells of GaSb were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAs(x)Sb(1-x). The composition of the AIAs(x)Sb(1-x) was varied to produce compressive biaxial strains in the GaSb. The confinement and strain in the GaSb quantum wells lift the degeneracy in the valence band, resulting in lower in-plane effective mass and higher mobility. A threefold enhancement of mobility was achieved, with room-temperature mobilities as high as 1350 cm(2)/Vs and 77K values as high as 10,400 cm(2)/V s for strains near 1%. These quantum wells should be suitable for high-performance p-channel field-effect transistors for complementary circuits operating at extremely low power. Published by Elsevier B.V.

引用

页码：47 / 53

页数：7

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