Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

被引：4

作者：

Jung, Sang Hyun ^{[1
,2
]}

Song, Keun Man ^{[1
]}

Choi, Young Su ^{[1
]}

Park, Hyeong-Ho ^{[1
]}

Shin, Hyun-Beom ^{[1
]}

Kang, Ho Kwan ^{[1
]}

Lee, Jaejin ^{[2
]}

机构：

[1] Korea Adv Nano Fab Ctr, Nano Proc Div, Suwon 443270, Kyeonggi, South Korea

[2] Ajou Univ, Dept Elect & Comp Engn, Suwon 443749, Kyeonggi, South Korea

来源：

JOURNAL OF NANOMATERIALS | 2013年 / 2013卷

基金：

新加坡国家研究基金会;

关键词：

HIGH-POWER; ULTRAVIOLET; EXTRACTION; LAYER; BLUE;

D O I：

10.1155/2013/832170

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

引用

页数：6

共 18 条

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