Solution-processable n-type and ambipolar semiconductors based on a fused cyclopentadithiophenebis(dicyanovinylene) core

被引：23

作者：

Shi, Xueliang ^{[1
]}

Chang, Jingjing ^{[1
]}

Chi, Chunyan ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore

来源：

CHEMICAL COMMUNICATIONS | 2013年 / 49卷 / 64期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; HIGH-PERFORMANCE; CHANNEL; TRANSPORT; DIIMIDES; NITROGEN; AFFINITY;

D O I：

10.1039/c3cc43680b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two fused cyclopentadithiophenebis(dicyanovinylene) derivatives (FCPDT-16 and FCPDT-C24) with a low-lying LUMO energy level (-3.88 eV) and a rigid core structure were successfully synthesized. They have good thermal stability and form highly ordered packing structures both in the bulk solid state and in thin films. The field effect transistors fabricated from a solution of these two compounds showed ambipolar behaviour with major n-channel operation. FCPDT-C16 exhibited electron mobility up to 0.16 cm(2) V-1 s(-1).

引用

页码：7135 / 7137

页数：3

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