Properties of Si-doped a-plane AlGaN layers

被引:5
作者
Chen, Hu [1 ]
Zhang, Xiong [1 ]
Chen, Shuai [1 ]
Fan, Aijie [1 ]
Li, Cheng [1 ]
Lu, Liang [1 ]
Rao, Lifeng [1 ]
Lyu, Jiadong [2 ]
Hu, Guohua [1 ]
Cui, Yiping [1 ]
机构
[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
[2] Southeast Univ, Engn Res Ctr New Light Sources Technol & Equipmen, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Non-polar a-plane n-AlGaN; SiH4 mole flow Rate; Electron concentration; Electron mobility; BLUE LUMINESCENCE; GAN;
D O I
10.1016/j.mssp.2020.105270
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The non-polar a-plane (11 (2) over bar0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r-plane (1 (1) over bar 02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction, room temperature photoluminescence spectrum, and Hall effect measurement were used to examine the influence of Si-doping on the crystalline quality, and the optical and electrical characteristics of the non-polar a-plane n-AlGaN epi-layer, respectively. The characterization results indicate that the electron concentration (EC), the electron mobility, and the crystalline quality for the non-polar a-plane n-AlGaN epi-layers could be improved significantly by optimizing the epitaxial growth conditions, especially the mole flow rate of SiH4 in the Si-doping process. In fact, at a SiH4 mole flow rate of 10.2 nmol/min, an EC as high as 1.25 x 10(18) cm(-3) and an electron mobility up to 3.86 cm(2)/V were achieved with the non-polar n-AlGaN epi-layer sample with the Al content of 41%.
引用
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页数:5
相关论文
共 26 条
  • [1] [Anonymous], 2017, APPL PHYS EXPRESS, DOI DOI 10.7567/APEX.10.011002
  • [2] [Anonymous], 2011, JPN J APPL PHYS 1, DOI DOI 10.1143/JJAP.50.055502
  • [3] [Anonymous], 2014, J APPL PHYS, DOI DOI 10.1063/1.4864020
  • [4] [Anonymous], 2017, APPL PHYS LETT, DOI DOI 10.1063/1.4977428
  • [5] Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN
    Boguslawski, P
    Bernholc, J
    [J]. ACTA PHYSICA POLONICA A, 1996, 90 (04) : 735 - 738
  • [6] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
    Bryan, Isaac
    Bryan, Zachary
    Washiyama, Shun
    Reddy, Pramod
    Gaddy, Benjamin
    Sarkar, Biplab
    Breckenridge, M. Hayden
    Guo, Qiang
    Bobea, Milena
    Tweedie, James
    Mita, Seiji
    Irving, Douglas
    Collazo, Ramon
    Sitar, Zlatko
    [J]. APPLIED PHYSICS LETTERS, 2018, 112 (06)
  • [7] Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
    Collazo, Ramon
    Mita, Seiji
    Xie, Jinqiao
    Rice, Anthony
    Tweedie, James
    Dalmau, Rafael
    Sitar, Zlatko
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2031 - 2033
  • [8] Quantum-confined Stark effect in an AlGaN/GaN/AlGaN single quantum well structure
    Deguchi, T
    Sekiguchi, K
    Nakamura, A
    Sota, T
    Matsuo, R
    Chichibu, S
    Nakamura, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (8B): : L914 - L916
  • [9] Hydrogen-carbon complexes and the blue luminescence band in GaN
    Demchenko, D. O.
    Diallo, I. C.
    Reshchikov, M. A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (03)
  • [10] Gotz W, 1996, APPL PHYS LETT, V68, P3144, DOI 10.1063/1.115805