Complex SEU signatures in high-speed analog-to-digital conversion

被引：6

作者：

Heidergott, WF ^{[1
]}

Ladbury, R

Marshall, PW

Buchner, S

Campbell, AB

Reed, RA

Hockmuth, J

Kha, N

Hammond, C

Seidleck, C

Assad, A

机构：

[1] Motorola Inc, Scottsdale, AZ 85252 USA

[2] NRL, Brookneal, VA 24528 USA

[3] SFA Inc, Largo, MD 20774 USA

[4] USN, Res Lab, Washington, DC 20275 USA

[5] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期

关键词：

analog-to-digital conversion; ion radiation effects; proton radiation effects;

D O I：

10.1109/23.983138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The complex single-event upset (SEU) signatures produced by high-speed analog-to-digital converter devices are analyzed to establish magnitude, duration, and pattern characteristics. Histograms and other descriptive summaries of event characteristics are identified and their use in performing system effects analysis is described.

引用

页码：1828 / 1832

页数：5

共 6 条

[1] MARSHALL P, 2001, IEEE T NUCL SCI, pR30
[2] REED RA, 1999, P RADECS99 FRANC SEP, P188
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DAVEY, MV
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[4] SINGLE EVENT EFFECTS IN ANALOG-TO-DIGITAL CONVERTERS - DEVICE PERFORMANCE AND SYSTEM IMPACT
TURFLINGER, TL
DAVEY, MV
MAPPES, BM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 2187 - 2194
[5] UNDERSTANDING SINGLE EVENT PHENOMENA IN COMPLEX ANALOG AND DIGITAL INTEGRATED-CIRCUITS
TURFLINGER, TL
DAVEY, MV
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1832 - 1838
[6] Single-event effects in analog and mixed-signal integrated circuits
Turflinger, TL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 594 - 602

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