Microstructure and optical properties of Pr3+-doped hafnium silicate films

被引：17

作者：

An, YongTao ^{[1
]}

Labbe, Christophe ^{[1
]}

Khomenkova, Larysa ^{[1
]}

Morales, Magali ^{[1
]}

Portier, Xavier ^{[1
]}

Gourbilleau, Fabrice ^{[1
]}

机构：

[1] UCBN, Ensicaen, CEA, CIMAP,CNRS,UMR 6252, F-14050 Caen 4, France

来源：

NANOSCALE RESEARCH LETTERS | 2013年 / 8卷

关键词：

Praseodymium; Hafnium silicate; Oxygen vacancies; Photoluminescence; Energy transfer; HIGH-K MATERIALS; LUMINESCENCE; EXCITATION; EMISSION; PR3+;

D O I：

10.1186/1556-276X-8-43

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (T (A)). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950A degrees C. The HfO2 phase demonstrates a pronounced crystallization in tetragonal phase upon 950A degrees C annealing. Pr3+ emission appeared at T (A) = 950A degrees C, and the highest efficiency of Pr3+ ion emission was detected upon a thermal treatment at 1,000A degrees C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr3+ ions. It is considered that oxygen vacancies act as effective Pr3+ sensitizer. Finally, a PL study of undoped HfO2 and HfSiO (x) matrices is performed to evidence the energy transfer.

引用

页码：1 / 7

页数：7

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