Disorder, defects, and optical absorption in a-Si and a-Si:H

被引:64
作者
Knief, S [1 ]
von Niessen, W [1 ]
机构
[1] Tech Univ Braunschweig, Inst Theoret & Phys Chem, D-38106 Braunschweig, Germany
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 20期
关键词
D O I
10.1103/PhysRevB.59.12940
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present the optical properties of various structural models for a-Si and a-Si:H. We discuss how topological disorder, hydrogen content, and different types of defects (dangling bonds and floating bonds) influence the shape of the optical-absorption spectrum and the position of the Urbach edge. The absorption behavior is characterized by the joint density of states. The band gaps are obtained via the Tauc plot. The principal structure of the optical absorption spectrum is determined mainly by the degree of topological disorder and the amount of hydrogen. The presence of defects gives rise to tail absorption. Dangling bonds affect the optical properties more than floating bonds do. [S0163-1829(99)08319-8].
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页码:12940 / 12946
页数:7
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