Characteristics of High-Performance Ambipolar Organic Field-Effect Transistors Based on a Diketopyrrolopyrrole-Benzothiadiazole Copolymer

被引：17
作者：
Ha, Tae-Jun [1 ]
Sonar, Prashant [2 ]
Singh, Samarendra P. [2 ,3 ]
Dodabalapur, Ananth [2 ,4 ]
机构：
[1] Univ Texas Austin, Austin, TX 78712 USA
[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Shiv Nadar Univ, Noida 203207, Uttar Pradesh, India
[4] Univ Texas Austin, Austin, TX 78758 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期
基金：
美国国家科学基金会;
关键词：
Ambipolar organic semiconductors; charge transport; dual-gate structure; organic field-effect transistor (FET); velocity distribution; THIN-FILM TRANSISTORS; HIGH-MOBILITY; TRANSPORT; ELECTRON;
D O I：
10.1109/TED.2012.2186613
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report the device characteristics of ambipolar thin-film transistors (TFTs) based on a diketopyrrolopyrrole-benzothiadiazole copolymer. This polymer semiconductor exhibits the largest comparable electron and hole mobility values in a single organic semiconductor. The key to realizing such high mobility values, which are > 0.5 cm(2)/V . s, is molecular design, i.e., the use of suitable surface treatments of the source/drain contact electrodes and device architectures, particularly top-gate configurations. The subthreshold characteristics of the TFT devices are greatly improved by the use of dual-gate device geometry. We also report the first measurement of the velocity distribution of electron and hole velocities in an ambipolar organic semiconductor.
引用
收藏
页码：1494 / 1500
页数：7
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