Next generation of Ge1-ySny (y=0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

被引：91

作者：

Grzybowski, G. ^{[1
]}

Beeler, R. T. ^{[1
]}

Jiang, L. ^{[2
]}

Smith, D. J. ^{[2
]}

Kouvetakis, J. ^{[1
]}

Menendez, J. ^{[2
]}

机构：

[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 07期

关键词：

MOLECULAR-BEAM EPITAXY; TIN; GE; SEMICONDUCTORS; DEVICES; FILMS; GAP;

D O I：

10.1063/1.4745770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Film growth and reaction kinetics studies have shown that trigermane (Ge3H8) is a superior Ge source for the epitaxial synthesis of Ge1-ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional Ge2H6/SnD4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge1-ySny layers with Sn concentrations up to at least 9% and thicknesses approaching 1 mu m. These thick films are found to be crucial for the observation of a strong, tunable photoluminescence signal near the threshold of the predicted direct-indirect bandgap crossover. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745770]

引用

页数：5

共 3 条

[1] Molecular epitaxy of pseudomorphic Ge1-ySny (Y=0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4
Wallace, P. M.
Senaratne, C. L.
Xu, Chi
Sims, P. E.
Kouvetakis, J.
Menendez, J.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (02)
[2] Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1-ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8
Mircovich, Matthew A.
Xu, Chi
Ringwala, Dhruve A.
Poweleit, Christian D.
Menendez, Jose
Kouvetakis, John
ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (08) : 3451 - 3460
[3] Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
Beeler, R. T.
Xu, Chi
Smith, D. J.
Grzybowski, G.
Menendez, J.
Kouvetakis, J.
APPLIED PHYSICS LETTERS, 2012, 101 (22)

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