Nondestructive characterization of the surface aging of HgI2 crystal

被引:0
作者
Yao, H
Erickson, JC
James, RB
Natarajan, M
机构
来源
DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Variable angle spectroscopic ellipsometry (VASE) and atomic force microscopy (AFM) measurements have been employed to characterize the surface aging of HgI2 crystals. A surface model including top surface roughness and subsurface defects was established and studied by VASE analysis, as a function of real time, after the 10% KI chemical etching. In this model, the surface defects associated with the surface aging were modeled by the Bruggeman effective-medium approximation (EMA) as a HgI2/voids mixed layer. The relative 2-dimensional (2D) surface-defect-densities were monitored as the surface aging proceeds. The VASE measurements indicated that high surface aging rates were related to high initial effective 2D surface-defect densities. The AFM profile revealed increasing physical surface roughness as surface aging took place. The cleaved HgI2 crystal surface presented a smooth surface and the lowest surface aging rate, while the as-grown HgI2 surface also presented a very low surface aging. The HgI2 surfaces baked at elevated temperatures presented accelerated surface aging phenomena after a 30 min. baking.
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页码:611 / 616
页数:6
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