Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

被引：14
作者：
Vorob'ev, AN
Komissarov, AE
Segal, AS
Makarov, YN
Karpov, SY
Zhmakin, AI
Rupp, R
机构：
[1] Univ Erlangen Nurnberg, Fluid Mech Dept, D-91058 Erlangen, Germany
[2] Inst Fine Mech & Opt, Comp Technol Dept, St Petersburg, Russia
[3] Sof Impact Ltd, St Petersburg 194156, Russia
[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[5] Siemens AG, Corp Res & Dev, D-91050 Erlangen, Germany
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
CVD; SiC; gas phase; nucleation;
D O I：
10.1016/S0921-5107(98)00497-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An advanced mathematical model of SiC CVD process accounting for formation and evolution of Si-droplets in the vapor phase is proposed. Effect of temperature on the nucleation process is considered. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：176 / 178
页数：3
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