Scintillation Yield Uniformity Studies On Single Crystals Of Tl Doped CsI

Single crystals of 0.1% Tl doped CsI (50 mm phi and 50mm L) have been grown using the Bridgman melt growth technique. Scintillation yield uniformity of radiation detector made from the as-grown crystals was checked using an Am-243 alpha (5.25 and 5.5 MeV) source. It was found that yield variation along the radial direction was within 2% over 0-15 mm and was less than 5% for the whole crystal. A correlation between radial temperature profile of furnace and yield uniformity was observed.