The Structural and Electrical Properties of Al/Pb(Zr0.52Ti0.48)O3/Al2O3/Si with an Al2O3 Layer Prepared by using the Molecular Atomic Deposition Method

被引：1

作者：

Yang Yi ^{[1
,2
]}

Zhou Chang-Jian ^{[1
,2
]}

Peng Ping-Gang ^{[1
,2
]}

Xie Dan ^{[1
,2
]}

Ren Tian-Ling ^{[1
,2
]}

Pan Xiao ^{[3
]}

Liu Jing-Song ^{[4
]}

机构：

[1] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[4] SW Univ Sci & Technol, State Key Lab Cultivat Base Nonmet Composites & F, Mianyang 621010, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 12期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

11;

D O I：

10.1088/0256-307X/29/12/128501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al2O3 layer prepared by using the molecular atomic deposition method and Pb(Zr0.52Ti0.48)O-3 (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to +/- 40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42 x 10(-7) A/cm(2) and 8.28 x 10(-7) A/cm(2) are obtained under sweep voltages of +/- 5 V and +/- 20 V, respectively.

引用

页数：3