Demonstration of High-speed Hysteresis-free Negative Capacitance in Ferroelectric Hf0.5Zr0.5O2

被引：0

作者：

Hoffmann, M. ^{[1
]}

Max, B. ^{[1
,2
]}

Mittmann, T. ^{[1
]}

Schroeder, U. ^{[1
]}

Slesazeck, S. ^{[1
]}

Mikolajick, T. ^{[1
,2
]}

机构：

[1] NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany

[2] Tech Univ Dresden, Chair Nanoelect Mat, Dresden, Germany

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the experimental observation of hysteresis-free negative capacitance (NC) in thin ferroelectric Hf0.5Zr0.5O2 (HZO) films through high-speed pulsed charge-voltage measurements. Hysteretic switching is suppressed by the addition of thin Al2O3 layers on top of the HZO to prevent the screening of the polarization. We observe an S-shaped polarization-electric field dependence without hysteresis in agreement with Landau theory, which enables direct extraction of NC modeling parameters for ferroelectric HZO. Hysteresis-free NC is demonstrated down to 100 ns pulse widths limited only by our measurement setup. These results give critical insights into the physics of ferroelectric NC and practical NC device design using ferroelectric HZO.

引用

页数：4

共 6 条

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