Heat transfer coefficient for water cooled heat sink: Application for standard power modules cooling at high temperature

被引:0
作者
Karim, O [1 ]
Crebier, JC [1 ]
Gillot, C [1 ]
Schaeffer, C [1 ]
Mallet, B [1 ]
Gimet, E [1 ]
机构
[1] ENSIEG, INPG, UJF, CNRS UMR 5529 Lab Electrotech Grenoble, F-38402 St Martin Dheres, France
来源
PESC 2001: 32ND ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS | 2001年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study presents an overview of water cooling methods used in Power Electronic field. The first one uses classical method with separated power module and cooling device. The second one deals with high reduction of conductive thermal resistance and could predominately be the final cooling solution in a close future. The last one, foreseen for future applications, consists in designing the power module and the cooling device in the silicon material, improving even more the overall thermal resistance. Each alternative may be requires a good knowledge of the thermal exchange laws in the heat exchanger. The Nusselt number, as a characteristic thermal parameter proposed in the literature, is not always realistic for all kinds of cooling devices. The work focuses on that correlated value determination taking into account the channel geometry, the fluid flow rate and its temperature. Then, the obtained value is used to make a real optimisation of the cooling device.
引用
收藏
页码:1938 / 1943
页数:6
相关论文
共 9 条
[1]  
GILLOT C, 1999, IAS 99, P1765
[2]  
HUGON, 1998, ENSIEG INPG ENG 3 YE
[3]  
KARIM O, 2000, THERMINIC 2000
[4]  
KNIGHT RW, 1991, J ELECT PACKAGING, V113
[5]  
PERRET C, 1999, IAS 99, P1780
[6]  
Rodrigues RG, 1998, IEEE IND APPLIC SOC, P942, DOI 10.1109/IAS.1998.730259
[7]  
SCHULZHARDER J, 2000, IEEE PESC 2000
[8]  
SOMOS IL, 1993, IEEE T MAGNETIC JAN
[9]   HIGH-PERFORMANCE HEAT SINKING FOR VLSI [J].
TUCKERMAN, DB ;
PEASE, RFW .
ELECTRON DEVICE LETTERS, 1981, 2 (05) :126-129