Integrated RF components in a SiGe bipolar technology

被引：43

作者：

Burghartz, JN ^{[1
]}

Soyuer, M ^{[1
]}

Jenkins, KA ^{[1
]}

Kies, M ^{[1
]}

Dolan, M ^{[1
]}

Stein, KJ ^{[1
]}

Malinowski, J ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] IBM CORP, SEMICOND RES & DEV CTR, HOPEWELL JCT, NY 12533 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 09期

关键词：

bandpass filters; capacitors; inductors; microwave devices; microwave integrated circuits; semiconductor device metallization; varactors;

D O I：

10.1109/4.628759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed, They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations, Spiral inductors have inductance values in the range of similar to 0.15-80 nH with typical maximum quality-factors (Q(max)) of 3-20, The Q(max's) are highest if the doping concentration under the inductors is kept minimum, It is shown that the inductor area is an important parameter toward optimization of Q(max) at a given frequency, The inductors can be represented in circuit design by a simple lumped-element model, MOS capacitors have Q's of similar to 20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of similar to 80/f(GHz)/C(pF), and varactors with a 40% tuning range have Q's of similar to 70/f(GHz)/C(pF). Those devices can be modeled by using lumped elements as well, The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter.

引用

页码：1440 / 1445

页数：6

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