Hot carrier-induced SOI MOSFET degradation under AC stress conditions

被引：11

作者：

Lee, JK ^{[1
]}

Choi, NJ

Hyun, YB

Yu, CG

Colinge, JP

Park, JT

机构：

[1] Univ Incheon, Dept Elect Engn, Inchon 402749, South Korea

[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

hot carriers; insulated gate FETs; MOS devices; semiconductor device reliability; silicon-on-insulator (SOI) technology;

D O I：

10.1109/55.988823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hot-carrier-induced device degradation in partially depleted silicon-on-insulator (SOI) devices has been investigated under ac stress conditions. The device degradation of both floating-body SOI devices and body contacted SOI devices have been measured and analyzed for different ac stress frequencies and gate bias voltages. Possible degradation mechanisms are suggested.

引用

页码：157 / 159

页数：3

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