Hot carrier-induced SOI MOSFET degradation under AC stress conditions

被引：11
|
作者：
Lee, JK [1 ]
Choi, NJ
Hyun, YB
Yu, CG
Colinge, JP
Park, JT
机构：
[1] Univ Incheon, Dept Elect Engn, Inchon 402749, South Korea
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
hot carriers; insulated gate FETs; MOS devices; semiconductor device reliability; silicon-on-insulator (SOI) technology;
D O I：
10.1109/55.988823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hot-carrier-induced device degradation in partially depleted silicon-on-insulator (SOI) devices has been investigated under ac stress conditions. The device degradation of both floating-body SOI devices and body contacted SOI devices have been measured and analyzed for different ac stress frequencies and gate bias voltages. Possible degradation mechanisms are suggested.
引用
收藏
页码：157 / 159
页数：3
相关论文
共 50 条
  • [1] The Hot-Carrier-Induced Degradation of SoI LIGBT Under AC Stress Conditions
    Zhang, Shifeng
    Han, Yan
    Ding, Koubao
    Zhang, Bin
    Zhang, Wei
    Wu, Huanting
    Gao, Feng
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (12) : 1548 - 1550
  • [2] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS
    CHOI, JY
    KO, PK
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 333 - 335
  • [3] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS.
    Choi, J.Y.
    Ko, P.K.
    Hu, Chenming
    Electron device letters, 1987, EDL-8 (08): : 333 - 335
  • [4] The Hot Carrier Degradation Rate Under AC Stress
    Sasse, Guido T.
    Bisschop, Jaap
    2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 830 - 834
  • [5] Hot carrier-induced degradation in bulk FinFETs
    Kim, SY
    Lee, JH
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) : 566 - 568
  • [6] HOT-CARRIER-INDUCED DEGRADATION IN PARA-MOSFETS UNDER AC STRESS
    ONG, TC
    SEKI, KC
    KO, PK
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 211 - 213
  • [7] Localization of NBT hot carrier-induced oxide damage in SOI pMOSFETs
    Lai, CS
    Hung, SC
    Lee, JW
    Chung, SS
    2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 710 - 711
  • [8] Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs
    Ioannou, D. P.
    Mishra, R.
    Ioannou, D. E.
    Liu, S. T.
    Hughes, H. L.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 929 - 934
  • [9] AC/DC CHARACTERIZATION OF NMOS AND PMOS HOT-CARRIER-INDUCED DEGRADATION UNDER AC/DC STRESS
    DAWES, M
    ALAVI, M
    KIM, DM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (11) : 2416 - 2419
  • [10] Universal Hot Carrier Degradation Model under DC and AC Stress
    Yan, Chu
    Ding, Yaru
    Qu, Yiming
    Zhao, Liang
    Zhao, Yi
    2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
12345