Heteroepitaxial Ge-on-Si by DC magnetron sputtering

被引：13

作者：

Steglich, Martin ^{[1
]}

Patzig, Christian ^{[3
]}

Berthold, Lutz ^{[3
]}

Schrempel, Frank ^{[1
]}

Fuechsel, Kevin ^{[1
]}

Hoeche, Thomas ^{[3
]}

Kley, Ernst-Bernhard ^{[1
]}

Tuennermann, Andreas ^{[1
,2
]}

机构：

[1] Univ Jena, Inst Appl Phys, Abbe Ctr Photon, D-07745 Jena, Germany

[2] Fraunhofer Inst Appl Opt & Precis Engn IOF, D-07745 Jena, Germany

[3] Fraunhofer Inst Mech Mat IWM, D-06120 Halle, Germany

来源：

AIP ADVANCES | 2013年 / 3卷 / 07期

关键词：

GROWTH; PHOTODETECTORS; PERFORMANCE; SILICON;

D O I：

10.1063/1.4813841

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380 degrees C. Typical Stransky-Krastanov growth is observed at 410 degrees C. At lower temperatures (320 degrees C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：8

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