DEPFET -: a pixel device with integrated amplification

被引：9
|
作者：
Neeser, W
Böcker, M
Buchholz, P
Fischer, P
Holl, P
Kemmer, J
Klein, P
Koch, H
Löcker, M
Lutz, G
Matthäy, H
Strüder, L
Trimpl, M
Ulrici, J
Wermes, N
机构：
[1] Univ Bonn, Inst Phys, D-53115 Bonn, Germany
[2] Univ Dortmund, Expt Phys E Vb, D-44221 Dortmund, Germany
[3] Ketek GmbH, D-85764 Oberschleissheim, Germany
[4] Ruhr Univ Bochum, D-44780 Bochum, Germany
[5] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany
[6] Max Planck Inst Extraterr Phys, D-85740 Garching, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 477卷 / 1-3期
关键词：
DEPFET matrix; integrated amplification; low noise; active pixel sensor; digital autoradiography;
D O I：
10.1016/S0168-9002(01)01886-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the DEPFET pixel concept, the absorbed radiation directly modulates the channel current of a p-JFET transistor being integrated into a fully depleted high ohmic silicon substrate in every pixel cell, offering very low noise operation at room temperature. Hence, DEPFET pixels open new possibilities in biomedical applications, but also have a potential in particle physics and astrophysics. Second prototype 50 mum x 50 mum single pixels as well as large (64 x 64) DEPFET matrices have been successfully produced and operated confirming the low noise behavior (12e). Device studies as well as a full DEPFET pixel Bioscope system to be used in real-time digital autoradiography with excellent spatial and energy resolution for X-rays are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：129 / 136
页数：8
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