64Mbit virtual channel synchronous DRAM

被引:0
|
作者
Matsui, Y [1 ]
Sakakibara, K [1 ]
Yamamoto, A [1 ]
Shimada, K [1 ]
Shinohara, I [1 ]
Kinoshita, M [1 ]
机构
[1] NEC Corp Ltd, LSI Memory Div 1, Tokyo, Japan
来源
NEC RESEARCH & DEVELOPMENT | 1999年 / 40卷 / 03期
关键词
DRAM; synchronous; virtual channel memory;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed 64Mbit virtual channel SDRAM as a solution for multi memory master systems. The virtual channel memory is the name of the architecture that includes multiple data register region between memory array and interface circuits. This paper describes the basic architecture of the virtual channel SDRAM, detailed data transfer technology, peripheral circuits and actual evaluation data, indicating excellent performance in terms of both speed and power.
引用
收藏
页码:282 / 286
页数:5
相关论文
共 46 条
  • [21] A Case Study on the Adoption and use of Synchronous Virtual Classrooms
    Martin, Florence
    Parker, Michele
    Oyarzun, Beth
    ELECTRONIC JOURNAL OF E-LEARNING, 2013, 11 (02): : 124 - 138
  • [22] A HYBRID FUZZY AND NEURAL APPROACH WITH VIRTUAL EXPERTS AND PARTIAL CONSENSUS FOR DRAM PRICE FORECASTING
    Chen, Toly
    INTERNATIONAL JOURNAL OF INNOVATIVE COMPUTING INFORMATION AND CONTROL, 2012, 8 (1B): : 583 - 597
  • [23] Analysis of serious bit line failure on 0.19um 64M DRAM with STI technology
    Lee, C
    Tang, CT
    MICROELECTRONIC YIELD, RELIABILITY, AND ADVANCED PACKAGING, 2000, 4229 : 92 - 102
  • [24] Leveraging DRAM Refresh to Protect the Memory Timing Channel of Cloud Chip Multi-Processors
    Wang, Ying
    Li, Wen
    Li, Huawei
    Li, Xiaowei
    2018 IEEE INTERNATIONAL TEST CONFERENCE IN ASIA (ITC-ASIA 2018), 2018, : 73 - 78
  • [25] Virtual fabrication using Directed Self-Assembly for process optimization in a 14nm DRAM
    Kamon, Mattan
    Akbulut, Mustafa
    Yan, Yiguang
    Faken, Daniel
    Pap, Andras
    Allampalli, Vasanth
    Greiner, Ken
    Fried, David
    ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VIII, 2016, 9777
  • [26] A Study of Bitline Contact Process Variation on DRAM Performance and DVC / BVC Failures using Virtual Fabrication
    Zhong, Yujia
    Wang, Qingpeng
    Deng, Dempsey
    Vincent, Benjamin
    Ervin, Joseph
    DTCO AND COMPUTATIONAL PATTERNING III, 2024, 12954
  • [27] Performance of wideband mobile channel on synchronous DS-CDMA
    Al-Sharari, Hamed D.
    PROCEEDINGS OF THE WSEAS INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING: SELECTED TOPICS ON CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING, 2007, : 476 - 479
  • [28] A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage
    Lin, Jyi-Tsong
    Lee, Wei-Han
    Lin, Po-Hsieh
    Haga, Steve W.
    Chen, Yun-Ru
    Kranti, Abhinav
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 5 (01): : 59 - 63
  • [29] Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor
    Jeong, Moonyoung
    Lee, Sangho
    Jun, Yootak
    Lee, Kiseok
    Park, Seokhan
    Oh, Jeonghoon
    Kim, Ilgweon
    Park, Jemin
    Song, Jaihyuk
    2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024, 2024,
  • [30] 0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability
    Kikukawa, H
    Tomishima, S
    Tsuji, T
    Kawasaki, T
    Sakamoto, S
    Ishikawa, M
    Abe, W
    Tanizaki, H
    Kato, H
    Uchikoba, T
    Inokuchi, T
    Senoh, M
    Fukushima, Y
    Niiro, M
    Maruta, M
    Shibayama, A
    Ooishi, T
    Takahashi, K
    Hidaka, H
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (07) : 932 - 940