30GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 mu m wavelength

被引：101

作者：

Kjebon, O

Schatz, R

Lourdudoss, S

Nilsson, S

Stalnacke, B

Backbom, L

机构：

[1] ROYAL INST TECHNOL,LAB ARTIFICIAL SEMICOND MAT,S-11640 KISTA,SWEDEN

[2] ROYAL INST TECHNOL,SEMICOND LAB,S-11640 KISTA,SWEDEN

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 06期

关键词：

distributed Bragg reflector lasers;

D O I：

10.1049/el:19970335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An increased resonance frequency and reduced damping of the resonance peak leading to a record high modulation bandwidth of 30GHz were observed in 1.55 mu m InGaAsP DBR lasers. These results are attributed to the mechanism of detuned loading.

引用

页码：488 / 489

页数：2

共 8 条

[1] THEORY OF SELFPULSATIONS IN 2-SECTION DFB LASERS [J].

BANDELOW, U ;

WUNSCHE, HJ ;

WENZEL, H .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (10) :1176-1179

[2]

BANDELOW U, 1996, PHOTONIC TECHNOL LET, V8, P614

[3] Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs [J].

Kjebon, O ;

Schatz, R ;

Lourdudoss, S ;

Nilsson, S ;

Stalnacke, B .

HIGH-SPEED SEMICONDUCTOR LASER SOURCES, 1996, 2684 :138-152

[4]

KJEBON O, 1993, P 19 EUR C OPT COMM, P201

[5]

MOEHRLE M, 1992, IEEE PHOTONICS TECHO, V4, P976

[6] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].

OLSHANSKY, R ;

HILL, P ;

LANZISERA, V ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418

[7]

SCHATZ R, 1996, P 15 IEEE INT SEM LA, P93

[8] DETUNED LOADING IN COUPLED CAVITY SEMICONDUCTOR-LASERS - EFFECT ON QUANTUM NOISE AND DYNAMICS [J].

VAHALA, K ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :501-503

← 1 →