Single-crystal p-i-n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

被引：1

作者：

Yeh, Wenchang ^{[1
]}

Tatebe, Kyohei ^{[1
]}

机构：

[1] Shimane Univ, Interdisciplinary Grad Sch Sci & Engn, Matsue, Shimane 6908504, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

TEMPERATURE SILICON EPITAXY; INDUCED CRYSTALLIZATION;

D O I：

10.7567/JJAP.54.08KB07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and a 50-nm-thick n(+) SE-Si film were successfully grown as the light-absorbing layer and emitter layer, respectively, on a heavily doped p-Si(100) wafer to form the p-i-n junction of a solar cell (SC). Heavily doped n(+) SE-Si with an electron concentration n of 3 x 10(20) cm(-3) was grown by cosputtering of Sb with Si. The characteristics of SE-Si grown at 310 degrees C was investigated in relation to annealing temperature. The oxygen concentration in SE-Si was similar to 10(18) cm(-3), which was found to originate from the gas released in the chamber. Oxygen-induced thermal donors then became the source of n in the film, and n was reduced to 1 x 10(16) cm(-3) after forming-gas annealing at 700 degrees C because the thermal donors were neutralized by hydrogen. The SC exhibited a maximum internal quantum efficiency of 73.7%. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

共 30 条

[1]

Alsema EA, 2000, PROG PHOTOVOLTAICS, V8, P17, DOI 10.1002/(SICI)1099-159X(200001/02)8:1<17::AID-PIP295>3.0.CO

[2]

2-C

[3] Electron-beam crystallized large grained silicon solar cell on glass substrate [J].

Amkreutz, D. ;

Mueller, J. ;

Schmidt, M. ;

Haenel, T. ;

Schulze, T. F. .

PROGRESS IN PHOTOVOLTAICS, 2011, 19 (08) :937-945

[4] Polycrystalline silicon thin-film solar cells: Status and perspectives [J].

Becker, C. ;

Amkreutz, D. ;

Sontheimer, T. ;

Preidel, V. ;

Lockau, D. ;

Haschke, J. ;

Jogschies, L. ;

Klimm, C. ;

Merkel, J. J. ;

Plocica, P. ;

Steffens, S. ;

Rech, B. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 119 :112-123

[5] Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization [J].

Dore, Jonathon ;

Ong, Daniel ;

Varlamov, Sergey ;

Egan, Renate ;

Green, Martin A. .

IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (01) :33-39

[6] Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films [J].

Endo, Yohei ;

Fujiwara, Tomoko ;

Ohdaira, Keisuke ;

Nishizaki, Shogo ;

Nishioka, Kensuke ;

Matsumura, Hideki .

THIN SOLID FILMS, 2010, 518 (17) :5003-5006

[7] Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique [J].

Fujita, Yuji ;

Hayashi, Shohei ;

Higashi, Seiichiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)

[8] 8% efficient thin-film polycrystalline-silicon solar cells based on aluminum-induced crystallization and thermal CVD [J].

Gordon, I. ;

Carnel, L. ;

Van Gestel, D. ;

Beaucarne, G. ;

Poortmans, J. .

PROGRESS IN PHOTOVOLTAICS, 2007, 15 (07) :575-586

[9] OPTICAL-PROPERTIES OF INTRINSIC SILICON AT 300 K [J].

GREEN, MA ;

KEEVERS, MJ .

PROGRESS IN PHOTOVOLTAICS, 1995, 3 (03) :189-192

[10] SURFACE SEGREGATION AND STRUCTURE OF SB-DOPED SI(100) FILMS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY [J].

HOBART, KD ;

GODBEY, DJ ;

TWIGG, ME ;

FATEMI, M ;

THOMPSON, PE .

SURFACE SCIENCE, 1995, 334 (1-3) :29-38

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