Pattern shape analysis tool for quantitative estimate of photomask and process

We developed a pattern shape analysis tool (MaskEXPRESS) which can evaluate quantitatively photomask pattern and fabrication process by means of image processing arising from CD-SEM or UV microscope, or ion machine. Although evaluation of complicated mask pattern has been pe om ed qualitatively as yet, MaskEXPRESS makes it possible to evaluate it quantitatively. MaskEXPRESS can also be applied to quantitative evaluation of sensitivity of inspection machine, a racy of EB writing and optimization of photomask fabrication process. This paper describes the outline of MaskEXPRESS and its functions. We investigated about the precision criteria of MaskEXPRESS and foul out the conditions of image processing for having accuracy equal to repeatability accuracy of measurement SEM. By changing experimentally mask fabrication conditions and analyzing the patterns, the following things dame cleat Hole pattern's area increases with keeping analogous shape as etching tune increases. Inner serif pattern tends to change in the direction of slant as writing dose increases. The rectangle fidelity of inner and outer serif pattern is improved according to the condition of insist process. We also preset the relationship between defect size and aerial image on wafer simulated utilizing MaskEXPRESS.