High-Speed Preparation of Highly (100)-Oriented CeO2 Film by Laser Chemical Vapor Deposition

被引：5

作者：

Zhao, Pei ^{[1
]}

Su, Shi ^{[1
]}

Wang, Ying ^{[1
]}

Chi, Chen ^{[1
]}

Zhang, Zhan Hui ^{[1
]}

Mao, Yang Wu ^{[1
]}

Huang, Zhi Liang ^{[1
]}

Xu, Yuan Lai ^{[1
]}

Goto, Takashi ^{[2
]}

机构：

[1] Wuhan Inst Technol, Key Lab Green Chem Proc, Hubei Key Lab Plasma Chem & Adv Mat, Minist Educ,Sch Mat Sci & Engn, Wuhan 430074, Peoples R China

[2] Tohoku Univ, Inst Mat Res, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2016年 / 99卷 / 09期

基金：

中国国家自然科学基金;

关键词：

laser chemical vapor deposition; CeO2 buffer layer; high deposition rate; LaAlO3 single crystal; epitaxial growth; SURFACE-MORPHOLOGY; THIN-FILMS; LARGE-AREA; LAYER; SUBSTRATE; DEFECTS; GROWTH;

D O I：

10.1111/jace.14279

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CeO2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027-1096 K (laser power was from 115 to 185 W), highly (100)-oriented CeO2 films with wedge-caped columnar grains were prepared, whose epitaxial growth relationship was CeO2 [100]//LAO [100] (CeO2 [010]//LAO [011]). Their full width at half maximum of the omega-scan on the (200) reflection and that of the phi-scan on the (220) reflection were 0.8 degrees-1.8 degrees and 0.7 degrees-1.2 degrees, respectively. The highest deposition rate at which CeO2 film with pure (100) preferred orientation could be obtained was 30 mu m h(-1).

引用

页码：3104 / 3110

页数：7

共 26 条

[11] CRYSTALLINE QUALITY AND SURFACE-MORPHOLOGY OF (100)CEO2 THIN-FILMS GROWN ON SAPPHIRE SUBSTRATES BY SOLID SOURCE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].