a-Si:H HEX-TFTs, a new technology for flat panel displays

被引：0

作者：

Lee, Hojin ^{[1
]}

Yoo, Juhn S. ^{[2
]}

Kim, C. -D. ^{[2
]}

Kang, In Byeong ^{[2
]}

Kanicki, Jerzy ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] LG Philips LCD Res & Dev Ctr, An Yang, South Korea

来源：

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single and multiple Hexagonal a-Si:H TFTs were designed and fabricated. It is shown that parallel connection of those devices increase the OLED output current to desirable value for give pixel electrode design. Enhanced electrical properties and stability of multiple Hexagonal TFTs are discussed in comparison to the single standard TFT.

引用

页码：1993 / +

页数：2

共 3 条

[1] AMORPHOUS-SILICON SHIFT REGISTER FOR ADDRESSING OUTPUT DRIVERS [J].

DACOSTA, VM ;

MARTIN, RA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (05) :596-600

[2] Effect of channel width on the electrical characteristics of amorphous/nanocrystalline silicon bilayer thin-film transistors [J].

Hatzopoulos, Argyrios T. ;

Arpatzanis, Nikolaos ;

Tassis, Dimitrios H. ;

Dimitriadis, Charalabos A. ;

Templier, Francois ;

Oudwan, Maher ;

Kamarinos, George .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) :1265-1269

[3] Field-effect a-Si:H solar cells with transparent conductive oxide comb-shaped electrodes [J].

Matsuki, N ;

Abiko, Y ;

Miyazaki, K ;

Kobayashi, M ;

Fujioka, H ;

Koinuma, H .

THIN SOLID FILMS, 2005, 486 (1-2) :210-213

← 1 →